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University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers have designed one of the most advanced data storage devices in the world. The invention is protected with ten international patents including Japan, USA, Corea and the European Union. Important companies such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device.
The researchers at the University of Granada Nanoelectronics Lab Noel Rodrguez and Francisco Gmiz have designed an Advanced Random Access Memory (A-RAM). The researchers developed the theoretical model of this new technology in 2009. The CEA-LETI lab which has developed one of the most advanced nanoelectronic technologies in the world have designed a device that experimentally confirms the results previously obtained in theoretical studies.
The results of this experimental validation have been published in the prestigious journal IEEE Electron Device Letters and were presented in the International Silicon on Insulator Technology Conference recently celebrated in San Francisco, USA.
In the wake of the new devices and microprocessors developed by Intel (Ivy Bridge), UGR scientists are investigating alternative 3D A2RAM-based memories such as FinFET-ARAM and Trigate-ARAM patented in France and presented in the International Memory Workshop celebrated in May 2012 in Milan, Italy.
Overcoming Challenges
University of Granada researchers have demonstrated that the memory cell A-RAM and its variant A2RAM can solve the miniaturization challenges in DRAM cells which is the type of memory that most digital devices such as computers, smartphones, tablets, etc. incorporate- long retention times, low battery consumption, and a large separation between the logic levels, which makes
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| Contact: Francisco Gmiz Prez fgamiz@ugr.es 34-958-246-145 University of Granada Source:Eurekalert |
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