AUSTIN, Texas The Semiconductor Research Corporation (SRC) and the National Institute of Standards and Technology (NIST) awarded The University of Texas at Austin a five-year, $7.8 million nanoelectronics grant.
The award will be used to develop novel, ultra-low-power transistor research at the South West Academy of Nanoelectronics (SWAN) 2.0 at the Cockrell School of Engineering. This is the second such award from the SRC and NIST collaboration. In all, SRC-NIST awarded three multi-university research centers for the second phase of its Nanoelectronics Research Initiative (NRI). The initiative includes participants from the semiconductor industry including IBM, Intel, Micron Technology, GLOBALFOUNDRIES and Texas Instruments.
"SWAN 2.0 is a tremendous vote of confidence in our faculty and students for their innovative research on advanced technology," said Gregory L. Fenves, dean of the Cockrell School of Engineering. "The SRC-NIST grant is an investment that will pay off many times with revolutionary energy-efficient mobile devices and the next generation of manufacturing, all of which will improve society and the economic competitiveness of the U.S."
SWAN 2.0 will use the grant to develop an ultra-low-power transistor, a building block of modern electronic devices, said Sanjay Banerjee, director of the center. SWAN 2.0 is headquartered at the Microelectronics Research Center, which is located at the J.J. Pickle Research Campus in Northwest Austin.
"We've developed novel transistor concepts, which if successful, would consume about 0.1 percent of the energy of existing transistors," Banerjee said. "There is a critical need for a radically new type of transistor to perform computing functions with very low power. There could be potential applications in mobile devices, and it could also lead to advanced nanoelectronics manufacturing research in the U.S."
As part of the grant, SWAN 2.0 is working with 16 professors
|Contact: Sandra Zaragoza|
University of Texas at Austin